Abstract

In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200) plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200) preferred orientation. For low dopant concentration levels, atomic force microscope (AFM) studies showed a reduction in roughness (and lower optical haze) with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

Highlights

  • Investigations into the deposition of transparent conducting oxide (TCO) thin films as electrodes are mainly driven by their high optical transparency in the visible region and high electrical conductivity [1], essential for enhanced power conversion efficiencies

  • A considerable body of work exists on the CVD of fluorine-doped tin dioxide (FTO) films [4,15,16] functional properties as a result of different translation speeds on doping levels and Sn:H2 O are still missing and is the focus of the present study

  • We have shown that increasing the translation rates of the susceptor results in lower growth rates and reduced surface roughness with smoother features

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Summary

Introduction

Investigations into the deposition of transparent conducting oxide (TCO) thin films as electrodes are mainly driven by their high optical transparency in the visible region and high electrical conductivity [1], essential for enhanced power conversion efficiencies In-line, rather than batch process eliminates the need to stop and start the deposition of materials This yields films with a range of properties such as thicknesses and growth rates by careful adjustment of the experimental parameters. We produced and studied FTO films by altering the APCVD deposition parameters These included the translation speeds of the susceptor under the coating head, dopant levels and different tin (Sn) precursor to water (H2 O) molar ratios, 1:5 and 1:30. Many other Sn precursors are available, but MBTC was chosen because of its previously shown ability to yield films with low resistivity [11,17]

Deposition of Thin Films
Characterization d
Characterization
Results and Discussion
Scanning
Conclusions
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