Abstract
Transparent conducing antimony doped tin oxide (SnOx:Sb) thin films were fabricated by solution-processed atmospheric-pressure 3rd generation mist chemical vapor deposition (3rd G mist CVD) system with two solution chambers and one mixing chamber to control the atmosphere in reaction area. To study how to reduce the resistivity, the effects of each additive component in dopant solution were investigated; this was followed by identification of components contributing to the fabrication of SnOx:Sb films. Experimentally, the HNO3 clearly affected the resistivity and the formation of SnO2 thin films through a change in the valence state of N derived from HNO3 promoting the transformation of Sn (II) and Sb (III) to Sn (IV) and Sb (V). Moreover, the values of electron and hole effective mass were defined using the specified referred parameters to confirm the band diagram of SnOx:Sb thin films fabricated by 3rd G mist CVD system.
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