Abstract
A simple model predicts that the energy of a transition element relative to the valence band edge is related to elastic stress and therefore to the radius. This model has been originally applied to a few elements in GaAs, but is shown to give moderately quantitative results for a range of substitutional iron-group transition elements from Sc to Cu in GaAs and to a lesser extent between measurements and theory for GaP and Si. The radius term involved is of the form R M 2 δR, where δR is the difference between the metal atom with a full 3 d shell and the tetrahedral covalent radius of the atom with +2 coordination. Other transition metal properties, such as distribution coefficients and hole lifetimes also appear to be related to atomic radius, implying that impurity induced stresses may be involved.
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