Transit-time diodes and transistors with variable injection for generation and detection of THz radiation

Vladimir Vyurkov,Konstantin Rudenko,Igor Semenikhin,Vladimir Lukichev,P Yermolov

doi:10.1051/itmconf/20193008001

Abstract

The non-linear model of THz generation in variable injection transit-time structures coupled with antenna is proposed. The simulation demonstrates the crossover from the initial harmonic regime of selfexcitation to non-harmonic generation in the developed stage.

Highlights

In the range of terahertz frequencies, an abrupt depression in generation power of both optical and electronic devices occurs [1]
The non-linear model of THz generation in variable injection transit-time structures coupled with antenna is proposed
The simulation demonstrates the crossover from the initial harmonic regime of self-excitation to non-harmonic generation in the developed stage

Summary

Introduction

In the range of terahertz frequencies, an abrupt depression in generation power of both optical and electronic devices occurs [1]. We continue the consideration of low-dimensional solid-state transit-time structures based on thin layers of silicon (2D) and an array of silicon nanowires (1D) for the generation and detection of terahertz radiation [2,3,4,5,6,7]. For the origination of negative conductivity in diodes with a drift-diffusion current (in the case of strong scattering), additional effects are required, such as impact ionization in avalanche-transit (IMPATT) diodes [11] or variable injection in barrierinjection transit-time (BARITT) diodes [12]. The boundary condition of varying injection from the left contact (the source or under the gate) is eV (t) n(x 0,t) n0 e kT 1 This formula describes the change in the potential barrier height caused by the alternating voltage V(t), while the coefficient α characterizes the efficiency of that change. The before mentioned boundary and initial conditions must be provided

Preliminary results of simulation

Detection

Conclusions