Abstract
Summary form only given. The generation of femtosecond THz-pulses in bulk semiconductors like GaAs, InP and InAs using ultrashort laser pulses is a well established technique. The emitted THz power can be significantly enhanced with a magnetic field applied perpendicular to the surface depletion field of the semiconductor. Here we report on the phase sensitive detection of femtosecond THz radiation that is generated in the reflection direction of bulk n-doped InAs without external electric field under the influence of a magnetic field. This technique allows us to distinguish between the field components generated by the surface depletion field and the additionally generated radiation by the magnetic field. By adjusting the relative phase between these two components the total field amplitude and the spectral distribution can be influenced. We also present a comparison between the generation of THz radiation with bulk InAs and biased GaAs transmitters.
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