Transit-time broad-banding of very high bandwidth monolithic p-i-n/HBT optical receivers

Abstract

The authors show that phase shifts due to electron transit-times in the collector regions of heterojunction bipolar monolithic optical receivers lead to a widebanding of the frequency response or, at worst, circuit instability. Simple quantitative expressions are derived in order to analyze this effect. The dependence of widebanding on the open-loop transistor bias conditions is discussed. >