Abstract
The small-signal current gain beta of fast Si self-aligned transistors is measured up to the transit frequency f/sub T/ using a 26.5-GHz microwave network analyzer system and special HF measuring probes. The influence of parasitic transistor elements such as the base-collector junction capacitance, the internal base resistance, and the peripheral transistor was confirmed in a real transistor at high frequencies by measurements on transistors with different emitter areas. The two-dimensional effects, which deviate from the expected one-pole frequency behavior of beta , can be described by the extended transistor model, namely the intrinsic model and the peripheral model. >
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