Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effect in SiGe HBTs during large signal switching

Abstract

The purpose of this work is to explore whether lateral dynamic emitter current-crowding (ECC) occurring during fast large-signal switching of bipolar transistors can be described sufficiently accurately and computationally efficiently with a 1-transistor (1-T) compact model.employing lateral charge partitioning across the internal base resistance. A procedure for determining the lateral charge partitioning factor is presented, 2-D mixed-mode device/circuit simulation and a distributed 10-transistor (10-T) compact model serve as reference for validating the compact model.