Transistor properties of exfoliated single crystals of2H−Mo(Se1−xTex)2(0≤x≤1)

Abstract

Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo(Se1-x Te-x)(2) with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2H - structure in all Mo(Se1-x Te-x)(2). The lattice constants of a and c increase monotonically with increasing x, indicating the substitution of Se by Te. When x 0.4. In contrast, the polarity of a thick single-crystal Mo(Se1-x Te-x)(2) FET did not change despite an increase in x. The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The mu value in the thin single-crystal FET showed a parabolic variation, with a minimum mu at around x = 0.4, which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.