Abstract
Three new quinoxalinoTTF derivatives with methyl, trifluoromethyl and fluoro groups were synthesized and characterized by UV–vis absorption spectroscopy, differential scanning calorimetry, X-ray single crystal analysis, X-ray diffraction, and field-effect transistor (FET) characteristics. All of them have π-stacking structures in the single crystals. The quinoxalinoTTF derivative with trifluoromethyl groups exhibited an n-type FET, which is a rare example of n-channel FETs based on TTF derivatives. The highest electron mobility is 0.01 cm 2 V −1 s. The FET polarity was converted to p-channel from n-channel by replacing the trifluoromethyl groups with methyl groups. The hole mobility is as high as 0.2 cm 2 V −1 s. In contrast, the fluoro substituted derivative did not show FET properties due to the poorly ordered molecular arrangement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
