Abstract
AbstractAn experimental and theoretical study of the silica surface in aqueous environment is presented. The current/voltage characteristics of silicon field effect transistors are measured as a function of the salt concentration of a KCl solution in contact with the SiO2 gate oxide. We find that a model assuming constant interface charge can describe the global trend of the measured salt dependence. A refined model, allowing for a varying interface charge, provides a quantitative description of the measurements. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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