Abstract
Transistor action in a gallium phosphide/thulium phosphide/gallium arsenide (GaP/TmP/GaAs) structure with a GaP emitter, TmP base, and GaAs collector is reported. The emitter-base junction was constructed through wafer bonding and the base-collector junction was formed by epitaxial growth of TmP on GaAs in a molecular beam epitaxy system. From the I-V measurements, a common base current gain /spl alpha//spl sime/0.55 measured at V/sub CB/=0 was obtained at room temperature.
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