Abstract
Leakage current of a power diode was found to flow at a much lower voltage than that of avalanche breakdown under the conditions of high voltage rise rate ( dV/ dt) and low frequency, and this leakage current was characteristic of a semi-insulating polycrystalline silicon (SIPOS) resistive field plate (RFP). This current, which we call transient voltage-induced leakage current (TVIC), has not been reported previously. TVIC can be suppressed by optimizing the reduced surface field (RESURF) structure. The electric charge for TVIC increased as both the applied voltage and the pulse time interval increased, whereas it decreased as the temperature increased. A possible model to explain the TVIC mechanism was presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
