Abstract
In this work, the transient two-state characteristics of edge thickened oxide (ETO) metal-insulator-semiconductor (MIS) tunnel diodes with various gate electrode areas were studied. The ETO MIS structures were first compared with the planar MIS structures to prove their transient memory potentials and then were simulated by TCAD to find out the mechanism of them. By TCAD simulation, it was focused that there is a lateral electric field built at the boundary of thin and thick oxides in ETO structure. The ETO MIS structures with various gate electrode areas were compared to find out the relation between the gate area and the transient memory performance. ETO MIS structure with proper gate electrode area was suggested for large transient application.
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