Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon

Abstract

The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (10 16) and a higher level (2×10 19) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si 28 as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping.