Abstract
The estimation of the power loss and associated transient junction temperature of power devices has become a major issue with the increase of the current density and high switching frequency. Thus, the problem of power device temperature response to fast heat-source changes is of concern. This paper presents a new methodology, which describes the evolution of the complete temperature field in power devices by using partially coupled finite element method (FEM). A very fast and accurate computation of the temperature evolution in switching devices is achieved, which is beyond the practicability of full finite element method analysis in case of high frequency power pulses over long time intervals. The method is applied to the IGBT (insulate gate bipolar transistor) device to demonstrate the application of this approach in the case of high frequency power pulses dissipation over long time intervals. Based on the measurement of the IGBT's dynamic characteristics, the estimated power loss provides accurate spatial junction temperature computation. Whereas, the finite element method (FEM) is used here in order to accurately predict the junction temperature gradients needed during dynamic or quasi-static operating conditions. This paper reports also on the effect of switching frequencies during transient thermal response of power devices
Published Version
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