Abstract
Using transient terahertz reflection spectroscopy, the far-infrared (0.1–1.1 THz) reflection amplitude and associated phase change upon reflection from undoped InSb was measured between 80 and 260 K. Using the Drude model, the transient terahertz data were fit by adjusting the values for the electron mobility and carrier concentration. The close agreement between the data and model validates using the Drude model to describe the electronic and optical properties of InSb below 1 THz. These results suggest a possible application of transient terahertz reflection spectroscopy for measuring semiconductor properties of thick samples without surface contact.
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