Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor

Abstract

For pt.I see ibid., vol.6, no.9, p.896-904 (1991). The model presented previously is applied to the case of a Si metal-oxide-semiconductor transistor. As will be shown, the drain current transients typically observed in the kink region at liquid helium temperatures can be explained by the forced depletion layer formation mechanism, i.e. by considering the substrate current induced build-up of the depletion charge at the drain, through shallow impact ionization and capture. Both the transient and hysteresis behaviour are described accurately by the time constant defined earlier in the region of non-zero substrate current.