Abstract
A Monte Carlo simulation method has been conducted to study transient response of electroluminescence in single-layer light-emitting devices. The results from the numerical method have been compared with our recent (transient) experimental results. The simulation results supported the role and contribution of accumulated charges at the metal–semiconductor interfaces in device operation. Several parameters like barrier heights and mobilities of charge carriers, width and distribution of the accumulated space charge regions in the device, have been used in the simulation work. Additionally, barriers for charge injection have been considered to be modified by the presence of space charges near the injecting interfaces. A recipe has been established to estimate different parameters of device operation from the comparison between simulation and experimental results.
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