Abstract
We have studied exciton spin relaxation in strained GaN epilayers on various sapphire substrates using spin-dependent transient reflectivity and three-pulse four-wave mixing measurements. Strikingly fast exciton spin relaxation (<1 ps) at 10 K was observed in the lowest exciton level (A-exciton) both in bulk and GaN layer on c-sapphire. In contrast, the transient signals in the GaN layer on a-sapphire show the break down of the spin polarization caused by the exchange interaction.
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