Abstract
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
