Abstract
AbstractSelf-aligned TiSi2 coated Si nanocrystal nonvolatile memory is fabricated. This kind of MOSFET memory device is not only thermally stable, but also shows better performance in charge storage capacity, writing, erasing speed and retention characteristics. This indicates that CMOS compatible silicidation process to fabricate TiSi2 coated Si nanocrystal memory is promising in memory device applications.
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