Abstract
We have studied the subband gap induced, transient photocurrent in an epitaxial GaN film immersed in an electrolyte solution. For photon energies near the midgap position, one- and two-photon (TP) contributoins were observed in the photocurrent. The one-photon term exhibited a sublinear intensity dependence and was attributed to carrier generation from traps in the gap. The TP current was negligible for energies below Egap/2. Above this energy, the dispersion was consistent with previous calculations of the TP absorption coefficient [β(ω)] in direct gap semiconductors. A relationship between the TP photocurrent and β(ω) determined a value for the latter of ∼1.5 cm/GW at photon energies above Egap/2.
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