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Abstract
In this contribution, we present a study of the current transients and polarization phenomena in n-type CdZnTe material with Au contacts with upwards bending of the bands near the metal-semiconductor (M-S) interface. The transient of the electric field along the sample due to the accumulation of positive space charge below the cathode at the M-S interface was studied by means of the Pockels effect. The analysis of the time and temperature variation of the electric field values at the M-S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe. We explain the change of the current with time as a result of changing electric field at the interface. The field dependence of barrier height due to the formation of interfacial layer at the M-S interface is the mechanism responsible for the current transient. Model to explain the transient phenomena in the studied structure has been proposed based on our findings.
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