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Abstract
We present a study of the polarization phenomena in n-type cadmium zinc telluride material with gold contacts that showed upwards bending of the bands near the metal–semiconductor (M–S) interface. The dynamic of electric field distribution along the sample due to the accumulation of positive space charge below the cathode at the M–S interface was studied by means of the Pockels effect. The analysis of the time, bias and temperature variation of the electric field values at the M–S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe.
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