Abstract
During Si molecular beam epitaxy on a Si(100) vicinal surface with monatomic height steps, we have found a transient mode which shows a characteristic behaviour in the coverage of 2 × 1 terraces. The mode consists of two competitive growth modes: a step flow growth mode and a two-dimensional nucleation growth mode. The two modes appear alternatively depending on the 2 × 1 terrace area which varies during the growth.
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