Abstract
AbstractThe origin of optical nonlinearity and its magnitude is investigated in different semiconductors and structures, as CdSe, GaAs, InSb, Si (pure, ion‐implanted, heavily doped or amorphous), MQWS. The usefulness of the transient grating technique is shown to study peculiarities of the non‐equilibrium processes in strong electric fields, at high excitation levels or to reveal the presence and transformation of defects. Some novel possibilities for the deflection of a laser beam and its modulation are demonstrated.
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