Abstract
In this study, we investigated the transient drain current characteristics of organic field-effect transistors having poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) as the semiconducting layer. When the F8T2 molecules contained a high concentration of residual bromine atoms, a large decrease in drain current – on the time scale of several milliseconds – was observed upon the application of gate voltage. This decrease in drain current can be fitted accurately using a stretched exponential equation, suggesting that bromine atoms in F8T2 form traps.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
