Abstract
In this study, we investigated the transient drain current characteristics of organic field-effect transistors having poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) as the semiconducting layer. When the F8T2 molecules contained a high concentration of residual bromine atoms, a large decrease in drain current – on the time scale of several milliseconds – was observed upon the application of gate voltage. This decrease in drain current can be fitted accurately using a stretched exponential equation, suggesting that bromine atoms in F8T2 form traps.
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