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Abstract
Abstract The electron-beam induced current (EBIC) and the transient current after applying an electron beam pulse are measured on the boron-doped diamond films grown homoepitaxially by microwave plasma-assisted chemical vapor deposition. The thermal emission rate of holes at the boron acceptor level of 0.31 eV above the valence band edge are obtained from the transient current measurements. The EBIC image corresponding to the surface roughness on the diamond substrate is observed in the epitaxial film. This suggests that the electrically active defects are introduced in the film during the growth.
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