Abstract
Main physical features of the collector resistance modulation processes have been studied via a one-dimensional simulation for n+–p–n0–n+ 4H–SiC bipolar junction transistor. The motion dynamics of minority carriers (holes) across the n0 collector layer during the switch-on process is traced. It is demonstrated that the effective modulation of the collector resistance is only possible in the case of a rather fast transistor switch-on. A necessary condition for the fast switch-on is the large amplitude and short leading edge of the base current pulse.
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