Transient characteristics of AlGaN/GaN high-electron-mobility transistor with bias-controllable field plate

Abstract

The trapping and emission of carriers in the gate-to-drain region of an AlGaN/GaN high-electron-mobility transistor (HEMT) have been investigated using a bias-controllable field plate (CFP). Once an instantaneous positive CFP voltage is applied after bias stress in a transient drain current measurement, carrier trapping occurs, which can subsequently be observed as a drain current discontinuity. Numerical analysis of carrier trapping using the Shockley–Read–Hall process also provides a trapped carrier density of 5.1 × 1012 cm−2 and an energy level of 0.6 eV.