Abstract
Abstract Based on the transient electric field migration directly probed by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique, we successfully detected the transient hole transport in the perovskite for the first time. From the spectroscopic point of view, SHG signal resonantly enhanced at the fundamental wavelength of around 1560 nm through the band-transition under the voltage application. Square dependence of the SH intensity on the applied voltage at the wavelength of 1560 nm clearly indicated the electric field induced process of the SHG. We could visualize the carrier motion in the channel of perovskite field effect transistor (FET) with this wavelength. Carrier mobility was estimated as 0.02 cm2/V by analyzing the transient carrier motion. TRM-SHG technique was also employed to investigate the effect of traps on the transient carrier motion. Based on the peak of the transient electric field distribution, trap density, and dynamic carrier mobility were separately estimated.
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