Abstract
A significant difference between the transient electric field profiles of the pentacene organic field-effect transistors (OFETs) with SiO2 and poly(methyl-methacrylate) (PMMA) insulators was found by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) experiment. The profile of former device was broad and changed smoothly, while the latter one had a sharp peak. Particularly, the peak of the transient electric field in SiO2-insulated devices moved much faster than that in the PMMA-insulated one. Based on several experimental evidences and computational simulations, we proposed that these differences might arise from a higher trapped carrier density in the conductive channel on the PMMA insulator. Simple approaches were developed to evaluate the trap density and define dynamic carrier mobility in terms of the transient electric field measured by the TRM-SHG technique. This mobility quantitatively depicts that the transient hole transport in the OFET with the PMMA insulator is trap controlled.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
