Transient bicarrier response in high-k dielectrics and its impact on transient charge effects in high-k complementary metal oxide semiconductor devices

Abstract

In this letter, transient charge trapping and detrapping characteristics in high-k n∕p metal oxide semiconductor field effect transistors (MOSFETs) were studied. Transient charge trapping was found to be an interface thickness-limited phenomenon. Additionally, transient trapping of electrons, rather than holes, was found to be dominant even in pMOSFETs. Transient charge recombination or bicarrier response within the high-k layer was the main reason for the dependence on input signal in high-k devices. Detrapping characteristics for nMOSEFTs and pMOSFETs were correlated to the transient hole and electron trappings, respectively.