Abstract
In order to study the effect of high-energy electrons on the structure of SiO2 film for gate dielectric. A kind of complex structure SiO2 film was irradiated under 1 MeV electron irradiation with different fluences. The changes in composition, microstructure and phase distribution of the SiO2 film surface induced by the 1 MeV electrons were characterized by Raman scattering spectroscopy (Raman), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The Raman scattering and TEM results show that the amorphous silicon (α-Si) is formed on the surface of the SiO2 film after 1 MeV electron irradiation. However, the amorphous silicon does not appear after 90 keV electron irradiations. Based on the comparison for different energy electrons, it can be believed that the formation of amorphous silicon is attributed to the displacement of oxygen atoms as s result of 1 MeV electron irradiation. In addition, XPS analyses show that the double-oxygen ions are formed in the surface layer of the SiO2 film after the irradiation.
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