Abstract
We have found that amorphization is induced in crystalline silicon under MeV electron irradiation at low temperatures of about 25 K. The amorphization process has been observed at 25 K by means of in situ transmission electron microscopy and diffraction. The dose of 2 MeV electrons needed for amorphization is smaller than $7.5\ifmmode\times\else\texttimes\fi{}{10}^{22}\mathrm{cm}{}^{\ensuremath{-}2}$ at 25 K, which corresponds to 5.0 displacements per atom. The threshold electron energy for amorphization at 25 K is about 1 MeV. We discuss the mechanism of amorphization in Si based on the experimental finding.
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