Abstract
The part played by the activator in delocalization of the excitation and defect formation in a CsI(Tl) crystal has been studied. Basing on the investigation of the long term afterglow kinetics for CsI(Tl) crystals with various activator concentrations, it has been found that the cation substituted Tl+ ions participate in the process of the charge carriers delocalization in CsI(Tl) crystals under daylight. Non-radiative decay of electronic excitations with the F center formation is stimulated by oxygen containing anions. The subsequent destruction of the F centers is accompanied by both, luminescence of the excitons localized near Tl+ and activator defect formation. The luminescence of Tl+ centers is reabsorbed by the stable activator defects arising in CsI(Tl) crystals under irradiation. As a result, a sensitized luminescence of activator defects appears along with Tl+ luminescence. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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