Abstract
Nanopantography is a method for massively parallel patterning of nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching of Si, with the native silicon oxide as hard mask, can improve patterning speed and etch profile. With this method, arrays of high aspect ratio (>5) ∼10 nm-diameter holes, as well as slots, were fabricated in silicon with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, was also demonstrated.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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