Abstract

A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen’s construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code. Program summaryProgram Title: TrackEtchingProgram Files doi:http://dx.doi.org/10.17632/7wb6pvpbgh.1Licensing provisions: CC0 1.0Programming language: JavaNature of problem: Calculation of the etched track profiles in ion irradiated SSNTDs is important for the application in the field of nucleopore filters and for their use as templates for nano wire fabrication.Solution method: A numerical approach, based on Huygen’s method for optical wavefront calculations has been employed. At any etching time, the etching is assumed to proceed along the normal to the etched surface. Several analytical functions are tried for the variation of the track etch velocity along the ion track as a function of the depth inside the surface and the energy/stopping power of the ion in the medium.Additional comments including Restrictions and Unusual features: The program does not generate three-dimensional profile. Provision for double sided etching will be incorporated in a later version of the code.

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