Track structure effects at p- n junctions in microelectronic circuits

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Accurate predictions of the soft error rates in microelectronic circuits exposed to energetic charged particles require the ability to predict charge collection at a junction as a function of the LET of the traversing particle, and the ability to predict the response of the circuit to the resulting voltage swing across the junction. Detailed modeling of charge collection will require quantitative information on the distribution of charges about the particle trajectory as a function of time from the initiation of the track until the charge is collected across the junction. Track structure models may contribute to quantitative explanations of the shape of the dependence of the soft error cross section on LET and the frequency of multiple upset events in VLSI circuits.