Abstract
Abstract High radiation resistance of monocrystalline diamond, Si, GaP and Ge is observed in exposures ti Xe ions. This fact indicates that no extended destructions induced by (d E /d x e are formed in these materials. The analysis of experimental data leads to the conclusion that the excited spike relaxation in semiconductors may be accompanied by a lattice recrystallization. Coulomb field and thermal spike processes are discussed as sequential stages of the dissipation of the deposited energy. Recrystallization suggests that the process can develop in a way that is opposite to that of latent track formation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
