Abstract
Abstract High radiation resistance of monocrystalline diamond, Si, GaP and Ge is observed in exposures ti Xe ions. This fact indicates that no extended destructions induced by (d E /d x e are formed in these materials. The analysis of experimental data leads to the conclusion that the excited spike relaxation in semiconductors may be accompanied by a lattice recrystallization. Coulomb field and thermal spike processes are discussed as sequential stages of the dissipation of the deposited energy. Recrystallization suggests that the process can develop in a way that is opposite to that of latent track formation.
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Schedule a callMore From: International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements
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