Tracer investigations on the diffusion of phosphorus from doped oxide sources

Abstract

Tracer investigations on the diffusion of phosphorus from phosphorus silicate glass (PSG) are described in this paper. Concentration profiles in the silicon and the PSG are given. Investigations were made also on the interaction between PSG and silicon dioxide and between PSG and silicon nitride. The shape of the concentration profiles obtained in the system PSG/silicon dioxide and the loss of phosphorus to the ambient depend on the phosphorus concentration in the PSG. From annealing experiments with PSG/silicon nitride layers it could be derived that phosphorus escapes from the PSG with high phosphorus concentration in the form of the pentoxide.