Abstract
Abstract The tracer diffusion coefficient of 111 In has been investigated in the chalcopyrite CuInS 2 at 650°C for different sulfur partial pressures p s 2 . The unusual shape of the profiles are attributed to two different volume diffusion processes of indium in the compound giving rise to two diffusion coefficients D 1 ∗ and D 2 ∗. The observed decrease of the tracer diffusion coefficients with increasing p s 2 is discussed in respect to the point defect structure of CuInS 2 and the migration mechanisms of cations in the chalcopyrite structure.
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