Abstract
Abstract We present a systematic study of the CdTe/ZnTe quantum dots (QDs) formation induced by tellurium (Te) deposition and desorption. The investigation of the QDs formation was performed by reflection high electron energy diffraction analysis as a function of the Te deposition time and temperature. We show that the Te can be deposited at a temperature as high as 210 °C which leads to a significant shortening of the time needed to fabricate one layer of CdTe QDs. Our investigation also reveals that a critical amount of Te is required to drive the QDs formation. This fast Te induced process to fabricate CdTe QDs was then applied to the fabrication of samples with multiple CdTe/ZnTe QDs. Transmission electron microscopy images suggest that vertical stacking of CdTe dots can be performed. This opens a way towards vertical coupling between CdTe QDs.
Published Version
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