Abstract
We discuss how charge trapping produces random telegraph noise (RTN) and low-frequency noise (1/f noise), working towards unified statistical modeling and parameter extraction. Modeling is based on discrete device physics quantities, which cause variability in the electrical behavior of MOSFETs. It allows for the derivation of analytical formulations for 1/f noise (frequency domain) and RTN (time domain) using a single modeling framework, where model parameters are the same in frequency and time domain. In this work we focus on the observation window, in time and frequency domain. We discuss how it impacts the observed variance of the threshold voltage taken over time, and the number of traps observed (active) in the time window or frequency window of interest.
Published Version
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