Abstract
Oxide-free surfaces of polycrystalline Cu are prepared using acetic acid etching after chemical-mechanical polishing. UV ozone treatment is shown to increase the work function of the cleaned Cu by up to 0.5 eV. There is also a large reduction in quantum efficiency at 265 nm. Cu sheet can be easily masked from ozone exposure by Si or glass, meaning that selected-area oxi-dation is possible. Oxygen plasma treatment has a similar effect to the UV ozone but is more difficult to mask. There is no increase in surface roughness after oxidation, meaning that the larger work function could significantly re-duce dark current in accelerator photocathodes without affecting the desired photoemission region.
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