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Abstract
The reactive magnetron co-sputtering of two confocal SiO 2 and Er 2O 3 cathodes in argon–hydrogen plasma was used to deposit Er-doped Si-rich-SiO 2 layers. The effects of deposition conditions (such as hydrogen rate and substrate temperature) and annealing treatment (temperature and time) on the structural, compositional and photoluminescence (PL) properties of the layers were examined. An enhancement was observed of both Er 3+ PL emission and Er 3+ lifetime at 1.54 μm in comparison with their counterparts for the best samples reported so far. It was shown that a lifetime as high as 9 ms can be reached, with comparable PL intensities for resonant and non-resonant excitation lines. The effective cross-section and the fraction of Er ions coupled to Si clusters are analyzed.
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