Abstract
AbstractWe report on transmission electron microscopy (TEM) characterisation of nano‐islands formed during atmospheric pressure growth of InGaN on GaN by metal‐organic vapour phase epitaxy (MOVPE). Although initial results seemed to indicate that three‐dimensional InGaN nano‐islands had formed, detailed TEM characterisation revealed that the islands do not have a hexagonal crystal structure, and electron energy loss spectroscopy suggests that the observed structures are metallic indium droplets formed during growth, which may be partially nitrided, rather than the expected strain‐induced epitaxial InGaN nano‐islands. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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