In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever.

Abstract

Current state-of-the-art insitu transmission electron microscopy (TEM) characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to immature insitu TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of insitu device-level TEM characterization. Herein, a representative insitu opto-electromechanical TEM characterization platform is put forward by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields for the first time. On this platform, static and dynamic insitu device-level TEM characterizations are implemented by utilizing molybdenum disulfide (MoS2 )nanoflake as channel material. E-beam modulation behavior in MoS2 transistors is demonstrated at ultra-high e-beam acceleration voltage (300kV), stemming from inelastic scattering electron doping into MoS2 nanoflakes. Moreover, insitu dynamic bending MoS2 nanodevices without/with laser irradiation reveals asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. This approach provides a step toward advanced insitu device-level TEM characterization technology with excellent perception ability and inspires insitu TEM characterization with ultra-sensitive force feedback and light sensing.