Abstract

Charges injection and accumulation in the dielectric remains a critical issue, mainly because these phenomena are involved in a great number of failure mechanisms in cables or electronic components. Achieving a better understanding of the mechanisms leading to charge injection, transport and trapping under electrical stress and of the relevant interface phenomena is a high priority. The classical methods used for space charge density profile measurements have a limited spatial resolution, which prevents them being used for investigating thin dielectric layers or interface processes. Thus, techniques derived from atomic force microscopy (AFM) have been investigated more and more for this kind of application, but so far they have been limited by their lack of in-depth sensitivity. In this paper a new method for space charge probing is described, the electrostatic force distance curve (EFDC), which is based on electrostatic force measurements using AFM. A comparison with the results obtained using kelvin force microscopy (KFM) allowed us to highlight the fact that EFDC is sensitive to charges localized in the third-dimension.

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